VS-80EBU02 www.vishay.com vishay semiconductors revision: 15-jun-11 1 document number: 93024 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ultrafast soft recovery diode, 80 a fred pt ? features ? ultrafast recovery time ? 175 c max. operatin g junction temperature ? screw mounting only ? designed and qualified according to jedec-jesd47 ? compliant to rohs directive 2002/95/ec ? powertab ? package benefits ? reduced rfi and emi ? higher frequency operation ? reduced snubbing ? reduced parts count description/applications these diodes are optimized to reduce losses and emi/rfi in high frequency power conditioning systems. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for hf welding, po wer converters and other applications where switchin g losses are not significant portion of the total losses. product summary package powertab ? i f(av) 80 a v r 200 v v f at i f 1.13 v t rr (typ.) see recovery table t j max. 175 c diode variation single die cathode anode powertab ? absolute maximum ratings parameter symbol test conditions max. units cathode to anode voltage v r 200 v continuous forward current i f(av) t c = 112 c 80 a single pulse forward current i fsm t c = 25 c 800 maximum repetitive forward current i frm square wave, 20 khz 160 operating junction and storage temperatures t j , t stg - 55 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 50 a 200 - - v forward voltage v f i f = 80 a - 0.98 1.13 i f = 80 a, t j = 175 c - 0.79 0.92 reverse leakage current i r v r = v r rated - - 50 a t j = 150 c, v r = v r rated - - 2 ma junction capacitance c t v r = 200 v - 89 - pf series inductance l s measured lead to lead 5 mm from package body - 3.5 - nh
VS-80EBU02 www.vishay.com vishay semiconductors revision: 15-jun-11 2 document number: 93024 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - - 35 ns t j = 25 c i f = 80 a v r = 160 v di f /dt = 200 a/s -32- t j = 125 c - 52 - peak recovery current i rrm t j = 25 c - 4.4 - a t j = 125 c - 8.8 - reverse recovery charge q rr t j = 25 c - 70 - nc t j = 125 c - 240 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units thermal resistance, junction to case r thjc - - 0.70 k/w thermal resistance, junction to heatsink r thcs mounting surface, flat, smooth and greased - 0.2 - weight - - 5.02 g -0.18- oz. mounting torque 1.2 (10) - 2.4 (20) n m (lbf in) marking device case style powertab? 80ebu02
VS-80EBU02 www.vishay.com vishay semiconductors revision: 15-jun-11 3 document number: 93024 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junc tion capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics forward voltage drop - v fm (v) instantaneous forward current - i f (a) 1 10 100 1000 0 0.5 1 1.5 2 2.5 t = 175?c t = 125?c t = 25?c j j j reverse voltage - v r (v) reverse current - i r (?) 0.001 0.01 0.1 1 10 100 1000 0 50 100 150 200 25?c t = 175?c j 125?c reverse voltage - v r (v) junction capacitance - c t (pf) 10 100 1000 10000 1101001000 t = 25?c j t 1 , rectangular pulse duration (seconds) thermal impedance z thjc (?/w) 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 single pulse (thermal resistance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 2 t 1 t p dm notes: 1. duty factor d = t1/ t2 2. peak tj = pdm x zthjc + tc
VS-80EBU02 www.vishay.com vishay semiconductors revision: 15-jun-11 4 document number: 93024 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r average forward current - i f (av) (a) allowable case temperature (?) 60 80 100 120 140 160 180 0 20406080100120 dc square wave (d = 0.50) 80% rated vr applied see note (1) average power loss ( watts ) average forward current - i f (av) (a) 0 20 40 60 80 100 120 02040608010012 0 dc rms limit d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 trr ( ns ) di f /dt (a/? ) 10 20 30 40 50 60 70 0 0 0 1 0 0 1 if = 160a if = 80a if = 40a vr = 160v tj = 125?c tj = 25?c qrr ( nc ) di f /dt (a/? ) 0 200 400 600 800 1000 1200 0 0 0 1 0 0 1 vr = 160v tj = 125?c tj = 25?c if = 160a if = 80a if = 40a
VS-80EBU02 www.vishay.com vishay semiconductors revision: 15-jun-11 5 document number: 93024 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-80EBU02 www.vishay.com vishay semiconductors revision: 15-jun-11 6 document number: 93024 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table 2 - current rating (80 = 80 a) 1 - vishay semiconductors product 3 - single diode 4 - powertab ? (ultrafast/hyperfast only) 5 - ultrafast recovery 6 - voltage rating (02 = 200 v) device code 5 6 1 3 2 4 80 vs- e b u 02 links to related documents dimensions www.vishay.com/doc?95240 part marking information www.vishay.com/doc?95370 application note www.vishay.com/doc?95179
outline dimensions www.vishay.com vishay semiconductors revision: 03-aug-11 1 document number: 95240 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powertab ? dimensions in millimeters (inches) 15.90 (0.62) 15.60 (0.61) 4.20 (0.16) 4.00 (0.15) 4.95 (0.19) 4.75 (0.18) 5.20 (0.20) 4.95 (0.19) 18.25 (0.71) 18.00 (0.70) 27.65 (1.08) 27.25 (1.07) 39.8 (1.56) 39.6 (1.55) 12.40 (0.48) 12.10 (0.47) 8.45 (0.33) 8.20 (0.32) 15.60 (0.61) 14.80 (0.58) 5.45 ref. (0.21 ref.) 1.30 (0.05) 1.10 (0.04) 3.09 (0.12) 3.00 (0.11) 1.35 (0.05) 1.20 (0.04) 0.60 (0.02) 0.40 (0.01) 12.20 (0.48) 12.00 (0.47) ? 4.20 (? 0.16) ? 4.00 (? 0.15) ? 4.20 (? 0.16) ? 4.00 (? 0.15) lead 1 lead 2 lead assignments lead 1 = cathode lead 2 = anode
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